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Electron-phonon coupling and monopolar charge fluctuations in intermediate valence TmSe
Polarized Raman spectra of intermediate valence Tm xSe (x=0.95, 1.00, 1.01) have been measured. The scattering intensity is interpreted in terms of a one-phonon density of states weighted by the electron-phonon matrix element. The latter is described in a model of phonon-induced local, intraionic ch...
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Published in: | Solid state communications 1981-01, Vol.39 (9), p.965-968 |
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container_issue | 9 |
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container_title | Solid state communications |
container_volume | 39 |
creator | Stüβer, N. Barth, M. Güntherodt, G. Jayaraman, A. |
description | Polarized Raman spectra of intermediate valence Tm
xSe (x=0.95, 1.00, 1.01) have been measured. The scattering intensity is interpreted in terms of a one-phonon density of states weighted by the electron-phonon matrix element. The latter is described in a model of phonon-induced local, intraionic charge deformabilities. In the symmetry-analysed Raman intensities of A
1g character, two peaks near 8.8meV and 21.9meV are attributed to monopolar charge deformations of the valence-fluctuating Tm ions. |
doi_str_mv | 10.1016/0038-1098(81)90066-1 |
format | article |
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xSe (x=0.95, 1.00, 1.01) have been measured. The scattering intensity is interpreted in terms of a one-phonon density of states weighted by the electron-phonon matrix element. The latter is described in a model of phonon-induced local, intraionic charge deformabilities. In the symmetry-analysed Raman intensities of A
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xSe (x=0.95, 1.00, 1.01) have been measured. The scattering intensity is interpreted in terms of a one-phonon density of states weighted by the electron-phonon matrix element. The latter is described in a model of phonon-induced local, intraionic charge deformabilities. In the symmetry-analysed Raman intensities of A
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title | Electron-phonon coupling and monopolar charge fluctuations in intermediate valence TmSe |
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