Electrical transport properties of thallium-doped p-type PbTe films

Hall measurements were made in the temperature range 77–700 K on thallium- doped p-type epitaxial films of PbTe having free carrier concentrations in the range 5×10 17−6×10 19 cm −3 at 300 K. The various band parameters, i.e. mobility, effective mass and population ratios for light and heavy holes,...

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Bibliographic Details
Published in:Thin solid films 1981-04, Vol.78 (2), p.153-159
Main Authors: Dawar, A.L., Taneja, O.P., Paradkar, S.K., Kumar, Partap, Mathur, P.C.
Format: Article
Language:English
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Summary:Hall measurements were made in the temperature range 77–700 K on thallium- doped p-type epitaxial films of PbTe having free carrier concentrations in the range 5×10 17−6×10 19 cm −3 at 300 K. The various band parameters, i.e. mobility, effective mass and population ratios for light and heavy holes, were estimated as functions of temperature and carrier concentration. These results were compared with reported data on bulk samples.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(81)90614-3