Depth profiling of oxygen in amorphous germanium films by secondary ion mass spectrometry

Secondary ion mass spectrometry was used for the investigation of the oxygen depth profile in amorphous germanium films deposited at different angles of condensation. A typical profile has three characteristic regions: a “surface” spike of the 16O - secondary ion current, a uniform oxygen distributi...

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Published in:Thin solid films 1980-01, Vol.65 (2), p.209-219
Main Authors: Nakhodkin, N.G., Bardamid, A.F., Shaldervan, A.I., Chenakin, S.P.
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Language:English
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description Secondary ion mass spectrometry was used for the investigation of the oxygen depth profile in amorphous germanium films deposited at different angles of condensation. A typical profile has three characteristic regions: a “surface” spike of the 16O - secondary ion current, a uniform oxygen distribution over the film volume and a “final” spike of the 16O - secondary ion current on the substrate. The surface and volume ion current intensities depend on the angles of condensation. Ge-Ag and Ge-C sandwiches were studied to determine the nature of the final spike. The results obtained are explained by the peculiarities of the rod-like structure of the film and by the effect of particle size on the adsorption by small particles.
doi_str_mv 10.1016/0040-6090(80)90255-2
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title Depth profiling of oxygen in amorphous germanium films by secondary ion mass spectrometry
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