Metalorganic Vapor Phase Epitaxial Growth for High Electron Mobility Transistor LSIs

We report on metalorganic vapor phase epitaxy (MOVPE) for high electron mobility transistor (HEMT) LSI. It is shown that the layers grown by a low-pressure barrel reactor with a large-area growth capacity (twelve 3-inch wafers) have an excellent reproducibility both for thickness and donor concentra...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1992-07, Vol.31 (7A), p.L826-L828, Article L826
Main Authors: OHORI, T, TOMESAKAI, N, SUZUKI, M, KASAI, K, KOMENO, J
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:We report on metalorganic vapor phase epitaxy (MOVPE) for high electron mobility transistor (HEMT) LSI. It is shown that the layers grown by a low-pressure barrel reactor with a large-area growth capacity (twelve 3-inch wafers) have an excellent reproducibility both for thickness and donor concentration with nearly ±1%. We applied MOVPE-grown wafers to fabricate a HEMT 64 kb SRAM with 0.6 µm gates and obtained a typical address access time of 1.2 ns at a power dissipation of 5.9 W.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.31.L826