Field-assisted photoemission to 2.1 microns from a Ag/ p -In0.77Ga0.23As photocathode

Reflection-mode photoemission to a 2.1-μm threshold has been achieved from an externally biased Ag/p-In0.77Ga0.23As cathode. Quantum yield at 1.9 μm is 2×10−3 electrons per incident photon for 2.4-V bias and a cathode cooled to ∼125 K. The cathode was grown by vapor-phase epitaxy on a compositionall...

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Bibliographic Details
Published in:Applied physics letters 1980-04, Vol.36 (8), p.639-640
Main Authors: Gregory, P. E., Escher, J. S., Saxena, R. R., Hyder, S. B.
Format: Article
Language:English
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Summary:Reflection-mode photoemission to a 2.1-μm threshold has been achieved from an externally biased Ag/p-In0.77Ga0.23As cathode. Quantum yield at 1.9 μm is 2×10−3 electrons per incident photon for 2.4-V bias and a cathode cooled to ∼125 K. The cathode was grown by vapor-phase epitaxy on a compositionally graded InAsP on InP (100) substrate using the hydride process.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.91608