Field-assisted photoemission to 2.1 microns from a Ag/ p -In0.77Ga0.23As photocathode

Reflection-mode photoemission to a 2.1-μm threshold has been achieved from an externally biased Ag/p-In0.77Ga0.23As cathode. Quantum yield at 1.9 μm is 2×10−3 electrons per incident photon for 2.4-V bias and a cathode cooled to ∼125 K. The cathode was grown by vapor-phase epitaxy on a compositionall...

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Published in:Applied physics letters 1980-04, Vol.36 (8), p.639-640
Main Authors: Gregory, P. E., Escher, J. S., Saxena, R. R., Hyder, S. B.
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Language:English
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cited_by cdi_FETCH-LOGICAL-c1678-9a127150dba39d7f189af5ae3dd7ef702965400963e26492c8e3deeb11782a793
cites cdi_FETCH-LOGICAL-c1678-9a127150dba39d7f189af5ae3dd7ef702965400963e26492c8e3deeb11782a793
container_end_page 640
container_issue 8
container_start_page 639
container_title Applied physics letters
container_volume 36
creator Gregory, P. E.
Escher, J. S.
Saxena, R. R.
Hyder, S. B.
description Reflection-mode photoemission to a 2.1-μm threshold has been achieved from an externally biased Ag/p-In0.77Ga0.23As cathode. Quantum yield at 1.9 μm is 2×10−3 electrons per incident photon for 2.4-V bias and a cathode cooled to ∼125 K. The cathode was grown by vapor-phase epitaxy on a compositionally graded InAsP on InP (100) substrate using the hydride process.
doi_str_mv 10.1063/1.91608
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_23715628</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>23715628</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1678-9a127150dba39d7f189af5ae3dd7ef702965400963e26492c8e3deeb11782a793</originalsourceid><addsrcrecordid>eNotUMtOwzAQtBBIlIL4BZ_g5HTXbvw4VhWUSpW4wNlyY4cGJXGI0wN_jyGcVqOdnZ0ZQu4RCgQpVlgYlKAvyAJBKSYQ9SVZAIBg0pR4TW5S-syw5EIsyPtzE1rPXEpNmoKnwylOMXRNxrGnU6S8QNo11Rj7ROsxdtTRzceKDpTteyiU2jkouNik-bJy0yn6cEuuatemcPc_l_nP09v2hR1ed_vt5sAqlEoz45ArLMEfnTBe1aiNq0sXhPcq1Aq4keUawEgRuFwbXum8CuGIqDR3yogleZh1hzF-nUOabHZehbZ1fYjnZLnI8pLrTHyciTlISmOo7TA2nRu_LYL9rc2i_atN_AAvm1u-</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>23715628</pqid></control><display><type>article</type><title>Field-assisted photoemission to 2.1 microns from a Ag/ p -In0.77Ga0.23As photocathode</title><source>AIP Digital Archive</source><creator>Gregory, P. E. ; Escher, J. S. ; Saxena, R. R. ; Hyder, S. B.</creator><creatorcontrib>Gregory, P. E. ; Escher, J. S. ; Saxena, R. R. ; Hyder, S. B.</creatorcontrib><description>Reflection-mode photoemission to a 2.1-μm threshold has been achieved from an externally biased Ag/p-In0.77Ga0.23As cathode. Quantum yield at 1.9 μm is 2×10−3 electrons per incident photon for 2.4-V bias and a cathode cooled to ∼125 K. The cathode was grown by vapor-phase epitaxy on a compositionally graded InAsP on InP (100) substrate using the hydride process.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.91608</identifier><language>eng</language><ispartof>Applied physics letters, 1980-04, Vol.36 (8), p.639-640</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1678-9a127150dba39d7f189af5ae3dd7ef702965400963e26492c8e3deeb11782a793</citedby><cites>FETCH-LOGICAL-c1678-9a127150dba39d7f189af5ae3dd7ef702965400963e26492c8e3deeb11782a793</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27898,27899</link.rule.ids></links><search><creatorcontrib>Gregory, P. E.</creatorcontrib><creatorcontrib>Escher, J. S.</creatorcontrib><creatorcontrib>Saxena, R. R.</creatorcontrib><creatorcontrib>Hyder, S. B.</creatorcontrib><title>Field-assisted photoemission to 2.1 microns from a Ag/ p -In0.77Ga0.23As photocathode</title><title>Applied physics letters</title><description>Reflection-mode photoemission to a 2.1-μm threshold has been achieved from an externally biased Ag/p-In0.77Ga0.23As cathode. Quantum yield at 1.9 μm is 2×10−3 electrons per incident photon for 2.4-V bias and a cathode cooled to ∼125 K. The cathode was grown by vapor-phase epitaxy on a compositionally graded InAsP on InP (100) substrate using the hydride process.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1980</creationdate><recordtype>article</recordtype><recordid>eNotUMtOwzAQtBBIlIL4BZ_g5HTXbvw4VhWUSpW4wNlyY4cGJXGI0wN_jyGcVqOdnZ0ZQu4RCgQpVlgYlKAvyAJBKSYQ9SVZAIBg0pR4TW5S-syw5EIsyPtzE1rPXEpNmoKnwylOMXRNxrGnU6S8QNo11Rj7ROsxdtTRzceKDpTteyiU2jkouNik-bJy0yn6cEuuatemcPc_l_nP09v2hR1ed_vt5sAqlEoz45ArLMEfnTBe1aiNq0sXhPcq1Aq4keUawEgRuFwbXum8CuGIqDR3yogleZh1hzF-nUOabHZehbZ1fYjnZLnI8pLrTHyciTlISmOo7TA2nRu_LYL9rc2i_atN_AAvm1u-</recordid><startdate>19800415</startdate><enddate>19800415</enddate><creator>Gregory, P. E.</creator><creator>Escher, J. S.</creator><creator>Saxena, R. R.</creator><creator>Hyder, S. B.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>19800415</creationdate><title>Field-assisted photoemission to 2.1 microns from a Ag/ p -In0.77Ga0.23As photocathode</title><author>Gregory, P. E. ; Escher, J. S. ; Saxena, R. R. ; Hyder, S. B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1678-9a127150dba39d7f189af5ae3dd7ef702965400963e26492c8e3deeb11782a793</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1980</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Gregory, P. E.</creatorcontrib><creatorcontrib>Escher, J. S.</creatorcontrib><creatorcontrib>Saxena, R. R.</creatorcontrib><creatorcontrib>Hyder, S. B.</creatorcontrib><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Gregory, P. E.</au><au>Escher, J. S.</au><au>Saxena, R. R.</au><au>Hyder, S. B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Field-assisted photoemission to 2.1 microns from a Ag/ p -In0.77Ga0.23As photocathode</atitle><jtitle>Applied physics letters</jtitle><date>1980-04-15</date><risdate>1980</risdate><volume>36</volume><issue>8</issue><spage>639</spage><epage>640</epage><pages>639-640</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Reflection-mode photoemission to a 2.1-μm threshold has been achieved from an externally biased Ag/p-In0.77Ga0.23As cathode. Quantum yield at 1.9 μm is 2×10−3 electrons per incident photon for 2.4-V bias and a cathode cooled to ∼125 K. The cathode was grown by vapor-phase epitaxy on a compositionally graded InAsP on InP (100) substrate using the hydride process.</abstract><doi>10.1063/1.91608</doi><tpages>2</tpages></addata></record>
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title Field-assisted photoemission to 2.1 microns from a Ag/ p -In0.77Ga0.23As photocathode
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-03-04T04%3A23%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Field-assisted%20photoemission%20to%202.1%20microns%20from%20a%20Ag/%20p%20-In0.77Ga0.23As%20photocathode&rft.jtitle=Applied%20physics%20letters&rft.au=Gregory,%20P.%20E.&rft.date=1980-04-15&rft.volume=36&rft.issue=8&rft.spage=639&rft.epage=640&rft.pages=639-640&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.91608&rft_dat=%3Cproquest_cross%3E23715628%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c1678-9a127150dba39d7f189af5ae3dd7ef702965400963e26492c8e3deeb11782a793%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=23715628&rft_id=info:pmid/&rfr_iscdi=true