Improved techniques for growth of large-area single-crystal Si sheets over SiO2 using lateral epitaxy by seeded solidification

Continuous single-crystal Si sheets over SiO2 with areas of several square centimeters have been produced from poly-Si films by the LESS technique (lateral epitaxy by seeded solidification). Seeding is achieved either with a narrow stripe opening in a recessed SiO2 layer on a single-crystal Si subst...

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Bibliographic Details
Published in:Applied physics letters 1981-10, Vol.39 (7), p.561-563
Main Authors: Tsaur, B-Y., Fan, John C. C., Geis, M. W., Silversmith, D. J., Mountain, R. W.
Format: Article
Language:English
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Summary:Continuous single-crystal Si sheets over SiO2 with areas of several square centimeters have been produced from poly-Si films by the LESS technique (lateral epitaxy by seeded solidification). Seeding is achieved either with a narrow stripe opening in a recessed SiO2 layer on a single-crystal Si substrate or with an external single-crystal Si seed. N-channel metal-oxide-semiconductor field-effect transistors (MOSFET’s) fabricated in these films exhibit surface electron mobilities as high as 700 cm2/V s.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.92794