A method of determining minority carrier lifetime and doping level profiles of low-doped metal-oxide-semiconductor structures using pulsed photoinjection

This method. aimed at determining doping level and minority carrier lifetime of low-doped semiconductors (

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Bibliographic Details
Published in:Journal of applied physics 1981, Vol.52 (9), p.5659-5664
Main Authors: Efron, U., Grinberg, J.
Format: Article
Language:English
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Description
Summary:This method. aimed at determining doping level and minority carrier lifetime of low-doped semiconductors (
ISSN:0021-8979
1089-7550
DOI:10.1063/1.329501