HgCdTe charge-coupled device technology

Charge-coupled device action has been demonstrated for the first time in the variable bandgap alloy Hg 1−xCd x Te. 16-bit shift registers have been fabricated on 0.25 eV n-type material with a charge transfer efficiency of 0.9995. The mode of operation of these devices is described and their perform...

Full description

Saved in:
Bibliographic Details
Published in:Infrared physics 1980, Vol.20 (1), p.1-20
Main Authors: Kinch, M.A., Chapman, R.A., Simmons, A., Buss, D.D., Borrello, S.R.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Charge-coupled device action has been demonstrated for the first time in the variable bandgap alloy Hg 1−xCd x Te. 16-bit shift registers have been fabricated on 0.25 eV n-type material with a charge transfer efficiency of 0.9995. The mode of operation of these devices is described and their performance compared to simple CCD theory as applied to this narrow-gap infrared sensitive material. Supporting data on singlelevel MIS devices is presented to indicate the validity of our device analysis and the potential of this technology for future focal-plane applications.
ISSN:0020-0891
DOI:10.1016/0020-0891(80)90002-0