A Highly Stabilized GaAs FET Oscillator Using a Dielectric Resonator Feedback Circuit in 9-14 GHz

A new type of highly stabilized GaAs FET oscillator using a dielectric resonator and a stabilization resistor in the feedback circuit has been developed. The oscillator fabricated with a microwave integrated circuit has a high external quality factor Q/sub ex/ for more than1000 with no hysteresis ph...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1980-08, Vol.28 (8), p.817-824
Main Authors: Ishihara, O., Mori, T., Sawano, H., Nakatani, M.
Format: Article
Language:English
Subjects:
Dielectrics
Feedback circuits
Frequency
Gallium arsenide
Microwave FET integrated circuits
Microwave FETs
Microwave integrated circuits
Microwave oscillators
Q factor
Resistors
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Summary:A new type of highly stabilized GaAs FET oscillator using a dielectric resonator and a stabilization resistor in the feedback circuit has been developed. The oscillator fabricated with a microwave integrated circuit has a high external quality factor Q/sub ex/ for more than1000 with no hysteresis phenomena. The microwave characteristics of the GaAs FET oscillator has revealed 1) high efficiency of 20 percent with 70-mW output power at 11.85 GHz, 2) a wide tuning range more than1000 MHz, 3) a wide oscillation frequency from 9 to 14 GHz with same MIC pattern by using five dielectric resonators of different sizes, 4) a high-frequency stability as low as /spl plusmn/ 150kHz in the tempature range from -20 to + 60/spl deg/ C, and 5) low FM noise of 0.07 Hz/ /spl radic/Hz at off-carrier frequency of 100kHz.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1980.1130177