Depth resolution for AES sputter profiles of GaAs/GaInAs strained superlattices

• Published in: Applied surface science 1993, Vol.72 (2), p.171-174
• Main Authors: Morais, J., Fazan, T.A., Landers, R.
• Format: Article
• Language: English
• Subjects: Atomic, molecular, and ion beam impact and interactions with surfaces; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Electron and ion emission by liquids and solids; impact phenomena; Exact sciences and technology; Impact phenomena (including electron spectra and sputtering); Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/0169-4332(93)90008-Y

The effect of varying the energy (250–2000 eV) and angle of incidence (50° or 80°) of Ar ions used to sputter etch a surface was observed on depth profiles of strained GaAs/ Ga 0.81 In 0.19As superlattices studied by Auger electron spectroscopy (AES). The superlattices were grown by atmospheric-pressure metal-organic chemical vapor deposition (MOCVD) with a nominal layer thickness of 50 Å. We show that using ion energies of around 500 eV and grazing incidence minimizes the artifacts due to the interaction between the ion beam and the surface.