Aluminium Redistribution in EFG \Edge-defined Film-fed Growth\ of Silicon Ribbon

A study of impurity transport in EFG of Si ribbon using spreading resistance measurements and infrared transmission spectroscopy is described. Redistribution of Al dopant occurs both in the ribbon thickness and width. The redistribution across the ribbon width is explained in terms of a two-dimensio...

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Bibliographic Details
Published in:Journal of crystal growth 1980-01, Vol.48 (1), p.74-84
Main Authors: Kalejs, J P, Freedman, G M, Wald, F V
Format: Article
Language:English
Online Access:Get full text
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Summary:A study of impurity transport in EFG of Si ribbon using spreading resistance measurements and infrared transmission spectroscopy is described. Redistribution of Al dopant occurs both in the ribbon thickness and width. The redistribution across the ribbon width is explained in terms of a two-dimensional model of impurity transport in the liquid ahead of the growth front. The diffusion coeff. of Al in liq. Si lies in the range 3-10x10-4cm2/s. 9 ref.--R.E.
ISSN:0022-0248