Influence of oxidation parameters on atomic roughness at the Si-SiO sub / 2/ interface

The roughness at the interface was determined quantitatively on an atomic scale after removal of the oxide by LEED in an ultrahigh vacuum. Silicon (111) samples were oxidized under various conditions of atm (dry and wet), temp. (800 and 1000 degrees C), time, and pre- and posttreatment. The oxidatio...

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Bibliographic Details
Published in:Journal of applied physics 1981-01, Vol.52 (N-6), p.4122-4127
Main Authors: Hahn, P O, Henzler, M
Format: Article
Language:English
Online Access:Get full text
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Summary:The roughness at the interface was determined quantitatively on an atomic scale after removal of the oxide by LEED in an ultrahigh vacuum. Silicon (111) samples were oxidized under various conditions of atm (dry and wet), temp. (800 and 1000 degrees C), time, and pre- and posttreatment. The oxidation process produces a roughness which may be decreased by low oxidation rates and appropriate annealing in nonoxidizing atm. The technique shows systematically how oxidation parameters determine the roughness at the interface, which is critical for the performance of metal-oxide-semiconductor (MOS) devices. 39 refs.
ISSN:0021-8979