Analysis of chemical processes of plasma etching

The emission spectrum of the plasma during the etching of silicon and SiO 2 layers was examined. Emission lines of fluorine (at 704 nm) and of CO (at 483.5 nm) were detected. The application of the latter line to the detection of the end point of etching is presented and the mechanism of etchant pro...

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Bibliographic Details
Published in:Thin solid films 1981-02, Vol.76 (3), p.215-219
Main Authors: Vályi, G., Schiller, V., Gyimesi, J., Gyulai, J.
Format: Article
Language:English
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Summary:The emission spectrum of the plasma during the etching of silicon and SiO 2 layers was examined. Emission lines of fluorine (at 704 nm) and of CO (at 483.5 nm) were detected. The application of the latter line to the detection of the end point of etching is presented and the mechanism of etchant production is described in terms of the thermochemistry of the reactions.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(81)90691-X