Proton Conducting Perhydropolysilazane-Derived Gate Dielectric for Solution-Processed Metal Oxide-Based Thin-Film Transistors

• Published in: ACS applied materials & interfaces 2020-04, Vol.12 (13), p.15396-15405
• Main Authors: Kang, Young Hun, Min, Bok Ki, Kim, Seong K, Bae, Garam, Song, Wooseok, Lee, Changjin, Cho, Song Yun, An, Ki-Seok
• Format: Article
• Language: English
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.0c01274

Perhydropolysilazane (PHPS), an inorganic polymer composed of Si–N and Si–H, has attracted much attention as a precursor for gate dielectrics of thin-film transistors (TFTs) due to its facile processing even at a relatively low temperature. However, an in-depth understanding of the tunable dielectric behavior of PHPS-derived dielectrics and their effects on TFT device performance is still lacking. In this study, the PHPS-derived dielectric films formed at different annealing temperatures have been used as the gate dielectric layer for solution-processed indium zinc oxide (IZO) TFTs. Notably, the IZO TFTs fabricated on PHPS annealed at 350 °C exhibit mobility as high as 118 cm2 V–1 s–1, which is about 50 times the IZO TFTs made on typical SiO2 dielectrics. The outstanding electrical performance is possible because of the exceptional capacitance of PHPS-derived dielectric caused by the limited hydrolysis reaction of PHPS at a low processing temperature (