Laser purification of silane: impurity reduction to the sub-part-per-million level

Selective ultraviolet photolysis of AsH3 and PH3 impurities in SiH4 has been employed to photochemically purify the SiH4. At ambient temperature, initial impurity levels of 50 ppm each of AsH3 and PH3 in SiH4 were reduced to less than 0.5 ppm upon irradiation with a 193-nm ArF excimer laser. Lowerin...

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Bibliographic Details
Published in:Journal of applied physics 1980-08, Vol.51 (8), p.4471-4474
Main Authors: Hartford, Allen, Huber, Elmer J., Lyman, John L., Clark, John H.
Format: Article
Language:English
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Summary:Selective ultraviolet photolysis of AsH3 and PH3 impurities in SiH4 has been employed to photochemically purify the SiH4. At ambient temperature, initial impurity levels of 50 ppm each of AsH3 and PH3 in SiH4 were reduced to less than 0.5 ppm upon irradiation with a 193-nm ArF excimer laser. Lowering the temperature at which the photolysis is carried out to below ambient results in a substantial reduction in the laser energy required for impurity removal.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.328268