Low temperature process for the reactive formation of Si sub 3 N sub 4 layers on InSb

An RT CVD process which gives Si sub 3 N sub 4 layers with electric characteristics comparable with those obtained by conventional processes is described.

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Bibliographic Details
Published in:Thin solid films 1980-01, Vol.67 (2), p.321-324
Main Authors: Olcaytug, F, Riedling, K, Fallmann, W
Format: Article
Language:English
Online Access:Get full text
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Description
Summary:An RT CVD process which gives Si sub 3 N sub 4 layers with electric characteristics comparable with those obtained by conventional processes is described.
ISSN:0040-6090