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Ultrasonic attenuation by a thin film of high transition temperature Nb3Ge
The electron--phonon contribution to the ultrasonic attenuation coefficient of a 0.5 mu m Nb3Ge film has been measured using 1.2 GHz surface acoustic waves. Analysis of the attenuation data shows that the largest part of the film has a superconducting transition near the bulk transition temperature,...
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Published in: | Solid state communications 1980-02, Vol.33 (7), p.781-784 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The electron--phonon contribution to the ultrasonic attenuation coefficient of a 0.5 mu m Nb3Ge film has been measured using 1.2 GHz surface acoustic waves. Analysis of the attenuation data shows that the largest part of the film has a superconducting transition near the bulk transition temperature, 18 deg K, even though the total film has a high transition temperature, namely 21.5 deg K. The electron mean free path is calculated from the electron--phonon attenuation data and is found to be an order of magnitude higher than expected for high transition temperature Nb3Ge films. 9 ref.--AA |
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ISSN: | 0038-1098 |
DOI: | 10.1016/0038-1098(80)90830-3 |