Inverted Si:PbS Colloidal Quantum Dot Heterojunction-Based Infrared Photodetector

Silicon and PbS colloidal quantum dot heterojunction photodetectors combine the advantages of the Si device and PbS CQDs, presenting a promising strategy for infrared light detecting. However, the construction of a high-quality CQDs:Si heterojunction remains a challenge. In this work, we introduce a...

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Bibliographic Details
Published in:ACS applied materials & interfaces 2020-04, Vol.12 (13), p.15414-15421
Main Authors: Xu, Kaimin, Xiao, Xiongbin, Zhou, Wenjia, Jiang, Xianyuan, Wei, Qi, Chen, Hao, Deng, Zhuo, Huang, Jian, Chen, Baile, Ning, Zhijun
Format: Article
Language:English
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Summary:Silicon and PbS colloidal quantum dot heterojunction photodetectors combine the advantages of the Si device and PbS CQDs, presenting a promising strategy for infrared light detecting. However, the construction of a high-quality CQDs:Si heterojunction remains a challenge. In this work, we introduce an inverted structure photodetector based on n-type Si and p-type PbS CQDs. Compared with the existing normal structure photodetector with p-type Si and n-type PbS CQDs, it has a lower energy band offset that provides more efficient charge extraction for the device. With the help of Si wafer surface passivation and the Si doping density optimization, the device delivers a high detectivity of 1.47 × 1011 Jones at 1540 nm without working bias, achieving the best performance in Si/PbS photodetectors in this region now. This work provides a new strategy to fabricate low-cost high-performance PbS CQDs photodetectors compatible with silicon arrays.
ISSN:1944-8244
1944-8252
DOI:10.1021/acsami.0c01744