Resonant Photovoltaic Effect in Doped Magnetic Semiconductors

The rectified nonlinear response of a clean, time-reversal symmetric, undoped semiconductor to an ac electric field includes a well known intrinsic shift current. We show that when Kramers degeneracy is broken, a distinct second order rectified response appears due to Bloch state anomalous velocitie...

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Bibliographic Details
Published in:Physical review letters 2020-02, Vol.124 (8), p.087402-087402, Article 087402
Main Authors: Bhalla, Pankaj, MacDonald, Allan H, Culcer, Dimitrie
Format: Article
Language:English
Subjects:
Alternating current
Electric fields
Fermi surfaces
Magnetic semiconductors
Metalloids
Nonlinear response
Photovoltaic effect
Semiconductors
Symmetry
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Summary:The rectified nonlinear response of a clean, time-reversal symmetric, undoped semiconductor to an ac electric field includes a well known intrinsic shift current. We show that when Kramers degeneracy is broken, a distinct second order rectified response appears due to Bloch state anomalous velocities in a system with an oscillating Fermi surface. This effect, which we refer to as the resonant photovoltaic effect, produces a resonant galvanic current peak at the interband absorption threshold in doped semiconductors or semimetals with approximate particle-hole symmetry. We evaluate the resonant photovoltaic effect for a model of the surface states of a magnetized topological insulator.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.124.087402