An 8-18-GHz YIG-Tuned FET Oscillator

We report here on the design and construction of a YIG- tuned FET oscillator tunable over the entire 8-18-GHz frequency range. The minimum output power from this device operating into a 50-omega load is about +6 dBm. The addition of a balanced buffer amplifier increases the power to about + 12-dBm m...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1980-07, Vol.28 (7), p.762-767
Main Authors: Papp, J.C., Koyano, Y.Y.
Format: Article
Language:English
Subjects:
Circuit testing
Diodes
FETs
Frequency
Gunn devices
Microwave oscillators
Reflection
Scattering parameters
Tunable circuits and devices
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Summary:We report here on the design and construction of a YIG- tuned FET oscillator tunable over the entire 8-18-GHz frequency range. The minimum output power from this device operating into a 50-omega load is about +6 dBm. The addition of a balanced buffer amplifier increases the power to about + 12-dBm minimum. When optimized for the 12-18-GHz band, the oscillator alone generates a minimum of + 10 dBm. The oscillator/ amplifier combination produces at least +15 dBm. We discuss a number of difficulties inherent in the design of broad-band oscillators, especially fixed frequency resonances, linearity, and power drop outs at the low end of the frequency range.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1980.1130164