An integrated photoconductive detector and waveguide structure

A new photoconductive detector is described that uses the previously reported optical field effect transistor structure. The detector has good sensitivity (photoconductive gain of ∼5) and high speed (∼150 psec). Light was coupled to this detector via a 7059 glass over SiO2 waveguide. The overall cou...

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Bibliographic Details
Published in:Applied physics letters 1980-01, Vol.36 (2), p.149-151
Main Authors: Gammel, J. C., Ballantyne, J. M.
Format: Article
Language:English
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Summary:A new photoconductive detector is described that uses the previously reported optical field effect transistor structure. The detector has good sensitivity (photoconductive gain of ∼5) and high speed (∼150 psec). Light was coupled to this detector via a 7059 glass over SiO2 waveguide. The overall coupling efficiency including losses in endfire coupling was about 40%.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.91410