On the boundary conditions of Schottky-barrier BARITT devices

A current-dependent boundary condition appropriate for Schottky-barrier BARITT devices is developed. The rf performance of the device based on this boundary condition is theoretically investigated. The computed results are found to be in close agreement with available experimental data. It is shown...

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Bibliographic Details
Published in:Journal of applied physics 1980-01, Vol.51 (1), p.503-507
Main Author: El-Gabaly, M.
Format: Article
Language:English
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Summary:A current-dependent boundary condition appropriate for Schottky-barrier BARITT devices is developed. The rf performance of the device based on this boundary condition is theoretically investigated. The computed results are found to be in close agreement with available experimental data. It is shown that the rf performance is greatly degraded at dc currents close to the saturation value of the metal-semiconductor contact. This limitation is due to the depletion of the injected holes at the forward biased contact. The device rf power capability can be improved if the device is made of a metal with low-barrier height for holes and a semiconductor with a high-impurity doping density.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.327351