Interaction-induced transition at low densities in silicon inversion layer

Intravalley exchange and correlation are found to induce a first-order transition at low densities in the inversion layer, lowering the valley degeneracy. For the n-channel on Si(100) surface, the reduction from two valleys to one occurs roughly below 3 × 10 11 cm −2. The one-valley phase with domai...

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Bibliographic Details
Published in:Surface science 1980-01, Vol.98 (1), p.250-255
Main Authors: Bloss, W.L., Sham, L.J., Vinter, B.
Format: Article
Language:English
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Summary:Intravalley exchange and correlation are found to induce a first-order transition at low densities in the inversion layer, lowering the valley degeneracy. For the n-channel on Si(100) surface, the reduction from two valleys to one occurs roughly below 3 × 10 11 cm −2. The one-valley phase with domain structure yields activated conductivity, Hall coefficient measuring the full density, and extra peaks in Shubnikov-De Haas oscillations. We, therefore, suggest this phase as a possible explanation of the low density behavior, presently ascribed to the Mott-Anderson localization or the pinned Wigner lattice.
ISSN:0039-6028
1879-2758
DOI:10.1016/0039-6028(80)90504-X