Photoelectrochemical corrosion as influenced by an oxide layer

A study of the competition between Si photocorrosion and oxidation of reducing species in solution is made. For that purpose capacity /voltage, current/voltage and a.c. photoconductance/voltage measurements were made. Both by experimental and theoretical arguments, it is shown that a thin oxide at t...

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Bibliographic Details
Published in:Journal of physical chemistry (1952) 1980-12, Vol.84 (25), p.3423-3428
Main Authors: Madou, Marc J, Frese, Karl W, Morrison, S. Roy
Format: Article
Language:English
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Summary:A study of the competition between Si photocorrosion and oxidation of reducing species in solution is made. For that purpose capacity /voltage, current/voltage and a.c. photoconductance/voltage measurements were made. Both by experimental and theoretical arguments, it is shown that a thin oxide at the surface of the Si electrode can be beneficial in terms of resistance to photocorrosion.13 refs.--AA
ISSN:0022-3654
1541-5740
DOI:10.1021/j100462a022