A Schottky-barrier-delineated stripe structure for a GaInAsP-InP cw Laser

A new stripe geometry for cw GaInAsP-InP layers is presented. The laser consists of a stripe contact defined on the In0.53 Ga0.47 As cap layer of a conventional double heterostructure. It is surrounded by two lateral-reverse-biased Schottky diodes fabricated onto the p-type confinement layer. These...

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Bibliographic Details
Published in:Applied physics letters 1981-06, Vol.38 (11), p.845-847
Main Authors: Bouley, J. C., Chaminant, G., Charil, J., Devoldere, P., Gilleron, M.
Format: Article
Language:English
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Summary:A new stripe geometry for cw GaInAsP-InP layers is presented. The laser consists of a stripe contact defined on the In0.53 Ga0.47 As cap layer of a conventional double heterostructure. It is surrounded by two lateral-reverse-biased Schottky diodes fabricated onto the p-type confinement layer. These lasers have a threshold curent of 100 mA for 320-μm-long and 20-μm-wide stripes and operate in the zero-order transverse mode.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.92214