EPR \Electron Paramagnetic Resonance\ Measurements on Chromium Doped GaAs, GaP, and InP

EPR measurements have been made on Cr doped GaAs sample at 4.2 deg K. An n-type sample doped with Cr and Si was irradiated with 2 MeV electrons to lower the Fermi level. No resonance from substitutional Cr+ (3d5) was detected, although the Crs2+ spectrum was observed. The generally accepted assignme...

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Bibliographic Details
Published in:Solid state communications 1980-12, Vol.36 (10), p.897-900
Main Authors: Goswami, N K, Newman, R C, Whitehouse, L E
Format: Article
Language:English
Online Access:Get full text
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Summary:EPR measurements have been made on Cr doped GaAs sample at 4.2 deg K. An n-type sample doped with Cr and Si was irradiated with 2 MeV electrons to lower the Fermi level. No resonance from substitutional Cr+ (3d5) was detected, although the Crs2+ spectrum was observed. The generally accepted assignment of a spectrum to Crs+ for photoexcited samples must therefore be revised. An isotropic resonance with g = 2 is observed in p-type Cr. doped GaAs, GaP, and InP but it is still not clear whether this is due to Crs4+ or interstitial Cri+ (3d5). 14 ref.--AA
ISSN:0038-1098