Solvent microinclusions in GaAs epitaxial layers

Morphologically perfect epitaxial layers of GaAs were grown from limited volume solvents Ga, In, and Sn. The temperature dependence of microhardness and residual mechanical stress both exhibit step changes in these parameters at temperatures close to the melting point of the solvents that were used....

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Bibliographic Details
Published in:Journal of crystal growth 1981-01, Vol.52 (1), p.354-358
Main Authors: Vasilenko, N.D., Glushkov, E.A., Maronchuk, I.E., Maronchuk, E.E.
Format: Article
Language:English
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Summary:Morphologically perfect epitaxial layers of GaAs were grown from limited volume solvents Ga, In, and Sn. The temperature dependence of microhardness and residual mechanical stress both exhibit step changes in these parameters at temperatures close to the melting point of the solvents that were used. This may be explained by the presence of solvent microinclusions captured by the growing layer. The microinclusion size ( $ ̌ 10 12 cm -3 ) were estimated from electrical and electron microscopical data. It is shown that the microinclusion movement can contribute to the degradationof epitaxial layers; this rate of motion, under an applied temperature gradient, was estimated.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(81)90218-9