Optimization of the Deposition Conditions for Epitaxial Silicon Films on Czochralski Sapphire in the Silane‐Hydrogen System

• Published in: Journal of the Electrochemical Society 1980-04, Vol.127 (4), p.957-961
• Main Author: Druminski, M.
• Format: Article
• Language: English
• ISSN: 0013-4651; 1945-7111
• DOI: 10.1149/1.2129795

The deposition of epitaxial Si films on (1012) Czochralski sapphire from the silane--H system was investigated for growth temp. from 880-980 deg C and for growth rates from 0.2-6.0 mu m /min. The film quality was evaluated by optical absorption measurements. The temp. range, in which epitaxial film quality was obtained, shifts with increasing growth rates to higher deposition temp. This epitaxial temp. range is rather broad, e.g. 915-965 deg C for 0.2-0.5 mu m/min and 935-985 deg C for 5.3-6.0 mu m/min. A region for the optimum epitaxial deposition conditions, very suitable for MOS applications, is defined by the min. values obtained from the optical absorption measurements. At temp. below 915 deg C, decreasing crystalline quality was observed due to an increasing fraction of polycrystalline Si. In addition the influence of the H2O content on the crystalline quality of the Si films was investigated; for the production of a good epitaxial Si film, the H2O impurity fraction must be smaller than 1 ppm, especially in the low temp. region.21 refs.--AA