Arsenic precipitation at dislocations in GaAs substrate material

High-resolution diffraction utilizing an analytical electron microscope has been employed to identify small (∼500 Å-diam) precipitates attached to line dislocations in gallium arsenide. The results show that the precipitates consist of crystallites of elemental hexagonal arsenic embedded within the...

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Published in:Journal of applied physics 1980-05, Vol.51 (5), p.2556-2560
Main Authors: Cullis, A. G., Augustus, P. D., Stirland, D. J.
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cited_by cdi_FETCH-LOGICAL-c322t-d3b3c358d85a3c9beccf36d81e39ea1b8bf8f1dad663a0d92adb0a50e39578693
cites cdi_FETCH-LOGICAL-c322t-d3b3c358d85a3c9beccf36d81e39ea1b8bf8f1dad663a0d92adb0a50e39578693
container_end_page 2560
container_issue 5
container_start_page 2556
container_title Journal of applied physics
container_volume 51
creator Cullis, A. G.
Augustus, P. D.
Stirland, D. J.
description High-resolution diffraction utilizing an analytical electron microscope has been employed to identify small (∼500 Å-diam) precipitates attached to line dislocations in gallium arsenide. The results show that the precipitates consist of crystallites of elemental hexagonal arsenic embedded within the gallium arsenide matrix. Precipitates were observed in a range of semi-insulating, p-type, and n-type material and were not dependent on the presence of specific additional dopants for their occurrence. The way in which the particles may originate is discussed.
doi_str_mv 10.1063/1.327979
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_23863463</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>23863463</sourcerecordid><originalsourceid>FETCH-LOGICAL-c322t-d3b3c358d85a3c9beccf36d81e39ea1b8bf8f1dad663a0d92adb0a50e39578693</originalsourceid><addsrcrecordid>eNotUE1LxDAUDKJgXQV_Qk7ipWvSZ9Pk5rLoKix40XN4TVKI9Mu87MF_b3X3MsN8MIdh7FaKtRQKHuQaqsY05owVUmhTNnUtzlkhRCVLvfiX7IroSwgpNZiCPW0ShTE6Pqfg4hwz5jiNHDP3kfrJ_UviceQ73BCnQ0s5YQ58WCBF7K_ZRYc9hZsTr9jny_PH9rXcv-_etpt96aCqcumhBQe19rpGcKYNznWgvJYBTEDZ6rbTnfTolQIU3lToW4G1WOK60crAit0dd-c0fR8CZTtEcqHvcQzTgWwFWsGjgqV4fyy6NBGl0Nk5xQHTj5XC_l1kpT1eBL-Z5Fk_</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>23863463</pqid></control><display><type>article</type><title>Arsenic precipitation at dislocations in GaAs substrate material</title><source>AIP Digital Archive</source><creator>Cullis, A. G. ; Augustus, P. D. ; Stirland, D. J.</creator><creatorcontrib>Cullis, A. G. ; Augustus, P. D. ; Stirland, D. J.</creatorcontrib><description>High-resolution diffraction utilizing an analytical electron microscope has been employed to identify small (∼500 Å-diam) precipitates attached to line dislocations in gallium arsenide. The results show that the precipitates consist of crystallites of elemental hexagonal arsenic embedded within the gallium arsenide matrix. Precipitates were observed in a range of semi-insulating, p-type, and n-type material and were not dependent on the presence of specific additional dopants for their occurrence. The way in which the particles may originate is discussed.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.327979</identifier><language>eng</language><ispartof>Journal of applied physics, 1980-05, Vol.51 (5), p.2556-2560</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c322t-d3b3c358d85a3c9beccf36d81e39ea1b8bf8f1dad663a0d92adb0a50e39578693</citedby><cites>FETCH-LOGICAL-c322t-d3b3c358d85a3c9beccf36d81e39ea1b8bf8f1dad663a0d92adb0a50e39578693</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Cullis, A. G.</creatorcontrib><creatorcontrib>Augustus, P. D.</creatorcontrib><creatorcontrib>Stirland, D. J.</creatorcontrib><title>Arsenic precipitation at dislocations in GaAs substrate material</title><title>Journal of applied physics</title><description>High-resolution diffraction utilizing an analytical electron microscope has been employed to identify small (∼500 Å-diam) precipitates attached to line dislocations in gallium arsenide. The results show that the precipitates consist of crystallites of elemental hexagonal arsenic embedded within the gallium arsenide matrix. Precipitates were observed in a range of semi-insulating, p-type, and n-type material and were not dependent on the presence of specific additional dopants for their occurrence. The way in which the particles may originate is discussed.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1980</creationdate><recordtype>article</recordtype><recordid>eNotUE1LxDAUDKJgXQV_Qk7ipWvSZ9Pk5rLoKix40XN4TVKI9Mu87MF_b3X3MsN8MIdh7FaKtRQKHuQaqsY05owVUmhTNnUtzlkhRCVLvfiX7IroSwgpNZiCPW0ShTE6Pqfg4hwz5jiNHDP3kfrJ_UviceQ73BCnQ0s5YQ58WCBF7K_ZRYc9hZsTr9jny_PH9rXcv-_etpt96aCqcumhBQe19rpGcKYNznWgvJYBTEDZ6rbTnfTolQIU3lToW4G1WOK60crAit0dd-c0fR8CZTtEcqHvcQzTgWwFWsGjgqV4fyy6NBGl0Nk5xQHTj5XC_l1kpT1eBL-Z5Fk_</recordid><startdate>19800501</startdate><enddate>19800501</enddate><creator>Cullis, A. G.</creator><creator>Augustus, P. D.</creator><creator>Stirland, D. J.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>19800501</creationdate><title>Arsenic precipitation at dislocations in GaAs substrate material</title><author>Cullis, A. G. ; Augustus, P. D. ; Stirland, D. J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c322t-d3b3c358d85a3c9beccf36d81e39ea1b8bf8f1dad663a0d92adb0a50e39578693</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1980</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cullis, A. G.</creatorcontrib><creatorcontrib>Augustus, P. D.</creatorcontrib><creatorcontrib>Stirland, D. J.</creatorcontrib><collection>CrossRef</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cullis, A. G.</au><au>Augustus, P. D.</au><au>Stirland, D. J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Arsenic precipitation at dislocations in GaAs substrate material</atitle><jtitle>Journal of applied physics</jtitle><date>1980-05-01</date><risdate>1980</risdate><volume>51</volume><issue>5</issue><spage>2556</spage><epage>2560</epage><pages>2556-2560</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>High-resolution diffraction utilizing an analytical electron microscope has been employed to identify small (∼500 Å-diam) precipitates attached to line dislocations in gallium arsenide. The results show that the precipitates consist of crystallites of elemental hexagonal arsenic embedded within the gallium arsenide matrix. Precipitates were observed in a range of semi-insulating, p-type, and n-type material and were not dependent on the presence of specific additional dopants for their occurrence. The way in which the particles may originate is discussed.</abstract><doi>10.1063/1.327979</doi><tpages>5</tpages></addata></record>
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title Arsenic precipitation at dislocations in GaAs substrate material
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T19%3A58%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Arsenic%20precipitation%20at%20dislocations%20in%20GaAs%20substrate%20material&rft.jtitle=Journal%20of%20applied%20physics&rft.au=Cullis,%20A.%20G.&rft.date=1980-05-01&rft.volume=51&rft.issue=5&rft.spage=2556&rft.epage=2560&rft.pages=2556-2560&rft.issn=0021-8979&rft.eissn=1089-7550&rft_id=info:doi/10.1063/1.327979&rft_dat=%3Cproquest_cross%3E23863463%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c322t-d3b3c358d85a3c9beccf36d81e39ea1b8bf8f1dad663a0d92adb0a50e39578693%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=23863463&rft_id=info:pmid/&rfr_iscdi=true