The effects of ionizing radiation on GaAs/AlGaAs and InGaAs/AlInAs heterojunction bipolar transistors

GaAs/AlGaAs and InGaAs/AlInAs Heterojunction Bipolar Transistors (HBTs) have been exposed to 60Co γ-ray doses up to 100 MRad. The d.c. current gain of GaAs/AlGaAs devices showed small increases for doses up to 75 MRad, due to a faster decrease in base current relative to collector current. After 100...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 1993-07, Vol.20 (3), p.280-291
Main Authors: Witmer, S.B., Mittleman, S.D., Lehy, D., Ren, F., Fullowan, T.R., Kopf, R.F., Abernathy, C.R., Pearton, S.J., Humphrey, D.A., Montgomery, R.K., Smith, P.R., Kreskovsky, J.P., Grubin, H.L.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:GaAs/AlGaAs and InGaAs/AlInAs Heterojunction Bipolar Transistors (HBTs) have been exposed to 60Co γ-ray doses up to 100 MRad. The d.c. current gain of GaAs/AlGaAs devices showed small increases for doses up to 75 MRad, due to a faster decrease in base current relative to collector current. After 100 MRad, none of the original devices were operational because of failure of the base-collector contact metallization (TiPtAu). Devices with either Be- or C-doped base layers showed the same response to the γ-ray doses. The InGaAs/AlInAs HBTs showed a small decrease (
ISSN:0921-5107
1873-4944
DOI:10.1016/0921-5107(93)90241-E