Resonant and localised modes due to boron in gallium arsenide

Silicon-doped n-type GaAs crystals pulled from a melt encapsulated with boric oxide exhibit an IR absorption band at 123 cm −1 as well as a number of localised-mode bands associated with boron and silicon. Evidence is presented which leads us to attribute the band at 123 cm −1 to a resonant mode ass...

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Bibliographic Details
Published in:The Journal of physics and chemistry of solids 1980, Vol.41 (4), p.341-344
Main Authors: Angress, J.F., Gledhill, G.A., Newman, R.C.
Format: Article
Language:English
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Summary:Silicon-doped n-type GaAs crystals pulled from a melt encapsulated with boric oxide exhibit an IR absorption band at 123 cm −1 as well as a number of localised-mode bands associated with boron and silicon. Evidence is presented which leads us to attribute the band at 123 cm −1 to a resonant mode associated with isolated B atoms on Ga sites. Other crystals containing high concentrations of silicon or phosphorous did not show such an absorption band. The results are discussed briefly in terms of the simple mass defect model for impurity vibrations.
ISSN:0022-3697
1879-2553
DOI:10.1016/0022-3697(80)90207-3