Segregation of evaporated gallium in laser doped silicon

Silicon wafers of n-type covered with a thin evaporated layer of pure gallium have been exposed to Q-switched Nd : YAG laser pulses (32 ns; 280, 410, 560 MW cm 2 ). Rutherford backscattering measurements with a 3 MeV He + beam show that a significant fraction of the gallium is incorporated in the si...

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Bibliographic Details
Published in:Physics letters. A 1980-01, Vol.78 (4), p.382-384
Main Authors: Berger, R., Sanjines, R., Jaccard, C., Lüthy, W., Siregar, M.R.T., Roulet, M.E.
Format: Article
Language:English
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Summary:Silicon wafers of n-type covered with a thin evaporated layer of pure gallium have been exposed to Q-switched Nd : YAG laser pulses (32 ns; 280, 410, 560 MW cm 2 ). Rutherford backscattering measurements with a 3 MeV He + beam show that a significant fraction of the gallium is incorporated in the silicon substrate. A drastic segregation accumulates the Ga atoms near the surface.
ISSN:0375-9601
1873-2429
DOI:10.1016/0375-9601(80)90401-6