The Behavior of Dislocations in GaAs Substrates During the Growth of GaxAl1 -- xAs Epitaxial Layers

Infrared elastobirefringence is used to investigate the dislocation distribution in GaAs substrates on which Ga0.35Al0.65As epitaxial layers have been grown at 950 deg C using liquid phase epitaxy. A marked asymmetry is observed in the dislocation distributions as regards the two nonequivalent <...

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Bibliographic Details
Published in:Journal of applied physics 1981-01, Vol.52 (6), p.4112-4114
Main Authors: Booyens, H, Basson, J H, Small, M B
Format: Article
Language:English
Online Access:Get full text
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Summary:Infrared elastobirefringence is used to investigate the dislocation distribution in GaAs substrates on which Ga0.35Al0.65As epitaxial layers have been grown at 950 deg C using liquid phase epitaxy. A marked asymmetry is observed in the dislocation distributions as regards the two nonequivalent < 110 > directions in the (001) plane. The dislocation distributions consist mainly of 60 deg dislocations and a small number of pure edge dislocations. Almost all the dislocations are of the alpha type. The dislocation distributions observed are discussed with reference to the properties of the dislocations involved and the temp. dependences of the lattice parameters of the epitaxial layer and the substrate.10 refs.--AA
ISSN:0021-8979
DOI:10.1063/1.329263