Spontaneous oscillations in gallium arsenide field effect transistors

We present results of experiments and numerical simulations designed to reveal the presence of spontaneous oscillations arising from negative differential mobility effects in gallium arsenide field effect transistors. The measurements include d.c. and pulsed current/voltage vs temperature characteri...

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Bibliographic Details
Published in:Solid-state electronics 1980-01, Vol.23 (2), p.157-172
Main Authors: Grubin, H.L., Ferry, D.K., Gleason, K.R.
Format: Article
Language:English
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Summary:We present results of experiments and numerical simulations designed to reveal the presence of spontaneous oscillations arising from negative differential mobility effects in gallium arsenide field effect transistors. The measurements include d.c. and pulsed current/voltage vs temperature characterization, sampling scope measurements, spectral analysis to 40 GHz and observation of light emission. The simulation is a time dependent large signal transient analysis arising from a fully two-dimensional solution of the self-consistent potential and charge within the device.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(80)90153-7