Spontaneous oscillations in gallium arsenide field effect transistors

We present results of experiments and numerical simulations designed to reveal the presence of spontaneous oscillations arising from negative differential mobility effects in gallium arsenide field effect transistors. The measurements include d.c. and pulsed current/voltage vs temperature characteri...

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Published in:Solid-state electronics 1980-01, Vol.23 (2), p.157-172
Main Authors: Grubin, H.L., Ferry, D.K., Gleason, K.R.
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Language:English
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cited_by cdi_FETCH-LOGICAL-c335t-28fb5240ba53421fb34563dcd72c3385993b2cf1bd54d274bf3237b0893089c63
cites cdi_FETCH-LOGICAL-c335t-28fb5240ba53421fb34563dcd72c3385993b2cf1bd54d274bf3237b0893089c63
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creator Grubin, H.L.
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description We present results of experiments and numerical simulations designed to reveal the presence of spontaneous oscillations arising from negative differential mobility effects in gallium arsenide field effect transistors. The measurements include d.c. and pulsed current/voltage vs temperature characterization, sampling scope measurements, spectral analysis to 40 GHz and observation of light emission. The simulation is a time dependent large signal transient analysis arising from a fully two-dimensional solution of the self-consistent potential and charge within the device.
doi_str_mv 10.1016/0038-1101(80)90153-7
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title Spontaneous oscillations in gallium arsenide field effect transistors
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