The effect of ground state population on the XeF laser performance

In this letter we describe an investigation of the effect of the bound ground state of XeF on the laser performance. This was accomplished by observing the intensity of the sidelight fluorescence of the B (v′=0) →X (v″=3) as a function of laser flux at 353 nm. Our data indicate that the ground state...

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Published in:Applied physics letters 1980-02, Vol.36 (4), p.243-245
Main Authors: Rokni, M., Jacob, J. H., Hsia, J. C., Trainor, D. W.
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Language:English
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description In this letter we describe an investigation of the effect of the bound ground state of XeF on the laser performance. This was accomplished by observing the intensity of the sidelight fluorescence of the B (v′=0) →X (v″=3) as a function of laser flux at 353 nm. Our data indicate that the ground state dissociates more rapidly as the laser mixture temperature is increased from 300 to 500 °K. As a result of the faster dissociation rate at 500 °K, the XeF laser efficiency increases by ≈1.5 as the mixture temperature is increased from 300 to 500 °K.
doi_str_mv 10.1063/1.91461
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title The effect of ground state population on the XeF laser performance
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