The Matched Feedback Amplifier: Ultrawide-Band Microwave Amplification with GaAs MESFET's

An ultrawide-band amplifier module has been developed that covers the frequency range from 350 MHz to 14 GHz. A minimum gain of 4 dB was obtained across this 40:1 bandwidth at an output power of 13 dBm. The amplifier makes use of negative and positive feedback and incorporates a GaAs MESFET that was...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 1980-04, Vol.28 (4), p.285-294
Main Authors: Niclas, K.B., Wilser, W.T., Gold, R.B., Hitchens, W.R.
Format: Article
Language:English
Subjects:
Bandwidth
Feedback amplifiers
Frequency
Gain
Gallium arsenide
MESFETs
Negative feedback
Power amplifiers
Power generation
Radiofrequency amplifiers
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Summary:An ultrawide-band amplifier module has been developed that covers the frequency range from 350 MHz to 14 GHz. A minimum gain of 4 dB was obtained across this 40:1 bandwidth at an output power of 13 dBm. The amplifier makes use of negative and positive feedback and incorporates a GaAs MESFET that was developed with special emphasis on low parasitics. The transistor has the gate dimensions 800 by 1 mu m. The technology and RF performance of the GaAs MESFET are discussed, as are the design considerations and performance of the single-ended feed-back amplifier module.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1980.1130067