Very Low Current Threshold GaAs--AlxGa1--xAs Double Heterostructure Lasers Grown by Molecular Beam Epitaxy

GaAs--AlxGa1--xAs (x = 0.3) double heterostructure (DH) lasers having very low current threshold densities have been prepared by molecular beam epitaxy (MBE). For DH lasers having Al-mole-fraction differences between the active layers and AlxGa1--xAs confinement layers Delta x approx 0.3, the best o...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1980-01, Vol.36 (1), p.11-14
Main Author: Tsang, W T
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:GaAs--AlxGa1--xAs (x = 0.3) double heterostructure (DH) lasers having very low current threshold densities have been prepared by molecular beam epitaxy (MBE). For DH lasers having Al-mole-fraction differences between the active layers and AlxGa1--xAs confinement layers Delta x approx 0.3, the best of the MBE-grown DH laser wafers have averaged current threshold densities similar to those obtained from the best of similar-geometry DH lasers prepared by liquid-phase epitaxy (LPE) and by metalorganic chemical vapor deposition (MO-CVD). With Delta x = 0.3, the lowest averaged current threshold density achieved is 800 A/cm2 (without reflective coating) for a wafer with an active layer thickness of 0.15 mu m.21 refs.--AA
ISSN:0003-6951
DOI:10.1063/1.91297