Exciton capture cross sections of indium and boron impurities in silicon

Measurements have been made of the decay rates and intensity ratios of photoluminescence lines from Si:In, B. We deduce values for the In and B exciton capture cross sections in the temperature range 3.6 − 5.9 K. The large difference between the In and B cross sections is discussed in terms of excit...

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Bibliographic Details
Published in:Solid state communications 1980-12, Vol.36 (12), p.1039-1045
Main Authors: Feenstra, R.M., McGill, T.C.
Format: Article
Language:English
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Summary:Measurements have been made of the decay rates and intensity ratios of photoluminescence lines from Si:In, B. We deduce values for the In and B exciton capture cross sections in the temperature range 3.6 − 5.9 K. The large difference between the In and B cross sections is discussed in terms of excited states of the In bound exciton.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(80)90033-2