Scanning Moiré Fringe Method: A Superior Approach to Perceive Defects, Interfaces, and Distortion in 2D Materials

Scanning moiré fringe (SMF) is a widely utilized technique for the precise measurement of the strain field in semiconductor transistors and heterointerfaces. With the growing challenges of traditional chip scaling, two-dimensional (2D) materials turn out to be ideal candidates for incorporation int...

Full description

Saved in:
Bibliographic Details
Published in:ACS nano 2020-05, Vol.14 (5), p.6034-6042
Main Authors: Lin, Yung-Chang, Ji, Hyun Goo, Chang, Li-Jen, Chang, Yao-Pang, Liu, Zheng, Lee, Gun-Do, Chiu, Po-Wen, Ago, Hiroki, Suenaga, Kazu
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Scanning moiré fringe (SMF) is a widely utilized technique for the precise measurement of the strain field in semiconductor transistors and heterointerfaces. With the growing challenges of traditional chip scaling, two-dimensional (2D) materials turn out to be ideal candidates for incorporation into semiconductor devices. Therefore, a method to efficiently locate defects and grain boundaries in 2D materials is highly essential. Here, we present a demonstration of using the SMF method to locate the domain boundaries at the nearly coherent interfaces with sub-angstrom spatial resolution under submicron fields of views. The strain field of small angle grain boundary and lateral heterojunction are instantaneously found and precisely determined by a quick SMF method without any atomic resolution images.
ISSN:1936-0851
1936-086X
DOI:10.1021/acsnano.0c01729