2Eg transitions in GaSb-AlSb quantum-well structures

Photoluminescence emission at twice the fundamental band-gap energy is observed in GaSb-AlSb multiple quantum-well structures for well thicknesses below 42 A, whereas it is not observed for larger thicknesses. The intensity of the emission increases dramatically with decreasing well width below this...

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Bibliographic Details
Published in:Physical review letters 1986-12, Vol.57 (25), p.3217-3220
Main Authors: FORCHEL, A, CEBULLA, U, TRÄNKLE, G, LACH, E, REINECKE, T. L, KROEMER, H, SUBBANNA, S, GRIFFITHS, G
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Other techniques and industries
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Photoluminescence emission at twice the fundamental band-gap energy is observed in GaSb-AlSb multiple quantum-well structures for well thicknesses below 42 A, whereas it is not observed for larger thicknesses. The intensity of the emission increases dramatically with decreasing well width below this value. The appearance of these novel features is traced to changes in the character of the band-edge wave functions due to quantum-well confinement. (Author)
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.57.3217