Behavior of ion-implanted As atoms in Si during molybdenum disilicide formation

The behavior of ion implanted As atoms during MoSi2 formation has been investigated by I-V measurement and neutron activation analysis. I-V characteristics of the MoSi2/Si interface was rectifying indicating that the impurity concentration in Si is very low. Arsenic atoms implanted in the Si substra...

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Bibliographic Details
Published in:Journal of applied physics 1986-05, Vol.59 (9), p.3073-3076
Main Authors: OHDOMARI, I, CHIKYOW, T, KAWARADA, H, KONUMA, K, KAKUMU, M, HASHIMOTO, K, KIMURA, I, YONEDA, K
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Exact sciences and technology
Impurities: concentration, distribution, and gradients
Physics
Structure of solids and liquids
crystallography
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Summary:The behavior of ion implanted As atoms during MoSi2 formation has been investigated by I-V measurement and neutron activation analysis. I-V characteristics of the MoSi2/Si interface was rectifying indicating that the impurity concentration in Si is very low. Arsenic atoms implanted in the Si substrate were found to redistribute toward the MoSi2/Si interface, but not into the underlying Si. The reason for no enhanced diffusion of As during MoSi2 formation has been discussed in terms of point defects which are not likely to be generated for the silicides in which Si is the dominant diffusing species.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.336930