A diffraction approach for the study of the mechanism of 3C to 6H transformation in SiC

Diffraction patterns taken from cubic silicon carbide crystals partially transformed to a 6H (ABCACB,...) structure show the presence of characteristic diffuse streaks parallel to c-asterisk suggesting that the transformation takes place by statistical insertion of stacking faults. The theory of dif...

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Bibliographic Details
Published in:Journal of materials science 1986-05, Vol.21 (5), p.1654-1666
Main Authors: KABRA, V. K, DHANANJAI PANDEY, SHRIKANT LELE
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Crystalline state (including molecular motions in solids)
Crystallographic aspects of phase transformations
pressure effects
Exact sciences and technology
Physics
Structure of solids and liquids
crystallography
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Summary:Diffraction patterns taken from cubic silicon carbide crystals partially transformed to a 6H (ABCACB,...) structure show the presence of characteristic diffuse streaks parallel to c-asterisk suggesting that the transformation takes place by statistical insertion of stacking faults. The theory of diffraction for cubic crystals undergoing transformation to the 6H structure by non-random insertion of deformation and layer displacement faults is developed separately. It is shown that a choice between the two routes of transformation can be made by comparing the theoretically predicted diffraction effects with those experimentally observed. Using such a diffraction approach, it is concluded that the transformation takes place by a nonrandom insertion of layer displacement faults. It is also shown that the observed diffraction characteristics cannot be explained in terms of nonrandom twinning through growth faults. (Author)
ISSN:0022-2461
1573-4803
DOI:10.1007/BF01114722