Delta-doped ohmic contacts to n-GaAs

A new type of nonalloyed ohmic contact to GaAs is realized by molecular beam epitaxy. The ohmic characteristic of the metal-semiconductor junction is obtained by placing a highly δ-doped donor layer a few lattice constants away from the metal-semiconductor interface of the contact and thus keeping t...

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Bibliographic Details
Published in:Applied physics letters 1986-08, Vol.49 (5), p.292-294
Main Authors: SCHUBERT, E. F, CUNNINGHAM, J. E, TSANG, W. T, CHIU, T. H
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:A new type of nonalloyed ohmic contact to GaAs is realized by molecular beam epitaxy. The ohmic characteristic of the metal-semiconductor junction is obtained by placing a highly δ-doped donor layer a few lattice constants away from the metal-semiconductor interface of the contact and thus keeping the tunneling barrier extremely thin. The current-voltage characteristic of the δ-doped contacts is strictly linear. The measured contact resistance is in the 10−6 Ω cm2 range. Theoretical analysis of the tunneling current through the triangular barrier predicts contact resistances in the range 10−7–10−9 Ω cm2. In spite of the high doping concentration (≂1021 cm−3) the surface morphology of the sample shows no degradation.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.97145