Measurement of four-photon absorption in GaP and ZnTe semiconductors

Intensity-dependent effective four-photon absorption (4PA) coefficients in GaP and ZnTe semiconductors were measured by the z-scan method using pump pulses of 1.75 µm wavelength, 135 fs duration, and up to 500 GWcm intensity. A nonlinear pulse propagation model, including linear dispersion and 4PA w...

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Bibliographic Details
Published in:Optics express 2020-04, Vol.28 (8), p.12352-12362
Main Authors: Monoszlai, B, Nugraha, P S, Tóth, Gy, Polónyi, Gy, Pálfalvi, L, Nasi, L, Ollmann, Z, Rohwer, E J, Gäumann, G, Hebling, J, Feurer, T, Fülöp, J A
Format: Article
Language:English
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Summary:Intensity-dependent effective four-photon absorption (4PA) coefficients in GaP and ZnTe semiconductors were measured by the z-scan method using pump pulses of 1.75 µm wavelength, 135 fs duration, and up to 500 GWcm intensity. A nonlinear pulse propagation model, including linear dispersion and 4PA was used to obtain the 4PA coefficients from measurements. The intensity-dependent effective 4PA coefficients vary from 2.6 × 10 to 65 × 10 cm GW in GaP, and from 3.5 × 10 to 9.1 × 10 cm GW in ZnTe. The anisotropy in 4PA was shown in GaP. The knowledge of 4PA coefficients is important for the design of semiconductor photonics devices.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.382388