A gate probe method of determining parasitic resistance in MESFET's

A gate probe method has been developed to accurately determine source, drain, and channel resistances of MESFET's. The method employs the gate current crowding phenomenon at higher drain currents. An exact equation was derived for the resistances whose fit to the data provides a self-consistent...

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Bibliographic Details
Published in:IEEE electron device letters 1986-07, Vol.7 (7), p.410-412
Main Authors: Holmstrom, R.P., Bloss, W.L., Chi, J.Y.
Format: Article
Language:English
Subjects:
Applied sciences
Contact resistance
Diodes
Electrical resistance measurement
Equations
Exact sciences and technology
MESFETs
Other techniques and industries
Particle measurements
Probes
Proximity effect
Semiconductor device modeling
Threshold voltage
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Description
Summary:A gate probe method has been developed to accurately determine source, drain, and channel resistances of MESFET's. The method employs the gate current crowding phenomenon at higher drain currents. An exact equation was derived for the resistances whose fit to the data provides a self-consistent check of the determined parameters.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1986.26419