High gain InGaAs/InP heterostructure bipolar transistors grown by gas source molecular beam epitaxy

The capability for high quality heterostructure bipolar transistors with structures in the InGaAs/InP system has been demonstrated by gas source molecular beam epitaxy. These devices are characterized by high current gain, β∼1100, only weakly dependent on the collector current. The current-voltage c...

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Bibliographic Details
Published in:Applied physics letters 1986-10, Vol.49 (17), p.1112-1114
Main Authors: NOTTENBURG, R. N, TEMKIN, H, PANISH, M. B, HAMM, R. A
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Other techniques and industries
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:The capability for high quality heterostructure bipolar transistors with structures in the InGaAs/InP system has been demonstrated by gas source molecular beam epitaxy. These devices are characterized by high current gain, β∼1100, only weakly dependent on the collector current. The current-voltage characteristics of the emitter base junction exhibit an ideality factor n=1.2 over a wide bias range.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.97438