High resolution scanning photoluminescence characterization of semiinsulating GaAs using a laser scanning microscope

Spatially resolved photoluminescence photoluminescence properties of semi-insulating, liquid encapsulated Czochralski-grown GaAs substrates are analyzed with a laser scanning microscope. The improved resolution of the laser scanning microscope results in the observation of single dislocations within...

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Bibliographic Details
Published in:Applied physics letters 1986-01, Vol.49 (25), p.1732-1734
Main Authors: Marek, J, Elliot, A G, Wilke, V, Geiss, R
Format: Article
Language:English
Online Access:Get full text
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Summary:Spatially resolved photoluminescence photoluminescence properties of semi-insulating, liquid encapsulated Czochralski-grown GaAs substrates are analyzed with a laser scanning microscope. The improved resolution of the laser scanning microscope results in the observation of single dislocations within the subgrain boundaries of the polyganized dislocation cell network for the first time by photoluminescence. Both the cell structure and the Cottrell cloud are clearly resolved.
ISSN:0003-6951