The influence of growth conditions on sulfur incorporation in GaAs grown by molecular beam epitaxy

An electrochemical sulfur cell has been used as a source of donors for molecular beam epitaxy grown GaAs. The galvanic cell is Pt/Ag/AgI/Ag2 S/Pt. The electrical and optical properties of the films grown in the substrate temperature range 550–590 °C are good. However, at substrate temperatures above...

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Bibliographic Details
Published in:Journal of applied physics 1983-01, Vol.54 (8), p.4421-4425
Main Authors: ANDREWS, D. A, HECKINGBOTTOM, R, DAVIES, G. J
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Vacuum deposition
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Summary:An electrochemical sulfur cell has been used as a source of donors for molecular beam epitaxy grown GaAs. The galvanic cell is Pt/Ag/AgI/Ag2 S/Pt. The electrical and optical properties of the films grown in the substrate temperature range 550–590 °C are good. However, at substrate temperatures above 600 °C the incorporation rate of sulfur is much reduced. The reduction in the incorporation rate is explained on the basis of the competing reactions (1) the incorporation of sulfur into the GaAs matrix and (2) the formation of volatile Ga2S. A detailed discussion of the incorporation at elevated substrate temperatures and with varying As4/Ga ratio is presented. It is also demonstrated that if the substrate temperature is reproducibly known then the electrochemical cell can be used to introduce intricate doping profiles into epitaxial GaAs. A hyperabrupt varactor diode has been fabricated as an example.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.332636